Modeling of Initial Stages of Annealing for Amorphizing Arsenic Implants

AbstructWe have analyzed the initial stages of annealing for amorphizing arsenic implants. The comparison of TED simulations to experimental data shows results that appear inconsistent with the standard assumption of complete removal of point defects from the regrown amorphized layer. Our analysis suggests that high arsenic concentrations may stabilize retention of vacancies during solid phase epitaxial regrowth and thereby lead to the formation of a vacancy-rich layer near the surface within the regrown region. The presence of this vacancy rich layer is able to help account for both increased initial diffusion within the peak re$on for high temperature annealing and increased clustering in the peak region for lower temperatures.